High Speed Heterostructure Devices: v.41: High Speed Heterostructure Devices

Eicke R. Weber , Albert C. Beer , Robert K. Willardson , Richard A. Kiehl , T.C.L. Gerhard Sollner

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview and an introduction to current literature. It includes the first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed. It offers a complete, three-chapter review of resonant tunneling; and provides an emphasis on circuits as well as devices.
  • Limba : Engleza
  • Cuprins : F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.
  • Data Publicarii : 06 Jul 1994
  • Format : Hardback
  • Numar pagini : 454
  • ISBN : 9780127521411
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869.99 Lei
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