The technology of crystal growth has advanced enormously during the past two decades. Among these advances, the development and refinement of Molecular Beam Epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. It provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy. It is thorough enough to benefit molecular beam epitaxy researchers. It is broad enough to benefit materials, surface, and device researchers. It features reference articles at the forefront of modern research as well as those of historical interest.
- Limba : Engleza
- Cuprins : Preface. List of Figures. List of Tables. Bulk Phase Equilibra. Free Energies and Open Systems. Elemental Phases. Alloy Phases. Thin Film Structure and Microstructure. Ordering and Clustering. Coherency and Semi-coherency. Surface Morphology and Composition. Surface Composition. Index.
- Data Publicarii : 25 Jan 1993
- Format : Paperback
- Numar pagini : 301
- ISBN : 9780127016252